j i., one. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn rf transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MMBR571L description ? low noise ? high current-gain bandwidth product ft = 8.0 ghz typ. @ lc= 50 ma ? high gain gnf = 16.5 db typ. @ lc= 10ma, f = 0.5 ghz applications ? designed for low noise , wide dynamic range front-end amplifiers and low-noise vco's. absolute maximum ratings(ta=25'c) symbol vgbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc= 7sr junction temperature storage temperature range value 20 10 3 80 0.33 150 -55-150 unit v v v ma w 'c ?c sot- 2 3 package _-""" ""--*_ h , m -iii t ii markbg s c \m lj.^l v-^a 1 \ ip r-i : ii ^t 1 -. base -; emitter 3; collector h _l |__| 1 | l. 1 1 i 1 ? 1 k*|l dim a b c d l- h k l m mm win 0. 37 1.19 2. 10 0. 39 1. 7s 2. 65 1.10 0. 15 0.076 max 0.51 1. 10 2.50 1.05 2.05 3.05 1.30 0.61 0. 17s m 4 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor MMBR571L electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo icbo hfe cob fy g nf g nf nf nf parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cutoff current dc current gain output capacitance current-gain?bandwidth product gain@noise figure gain@noise figure noise figure noise figure conditions lc= 1ma; ib= 0 lc= 0.1ma; ie= 0 ie= 50 11 a ; lc= 0 vcb= 8v; ie= 0 lc= 30ma ; vce= 5v le=0;vcb=10v;f=1mhz lc= 50ma ; vce= 5v; f= 1ghz lc=10ma;vce=5v;f=0.5ghz lc=10ma;vce=5v;f=1ghz lc= 10ma ; vce= 5v; f= 0.5ghz lc=10ma;vce=5v;f=1ghz min 10 20 3 50 typ. 0.7 8 16.5 10.5 2.0 2.6 max 10 300 1.0 unit v v v ua pf ghz db db db db maximum available gain versus frequency current gain-bandwidth versus i^: 01 o i? ul !-5 ?s; ^j. 2k 3 ic s ? 1 \ gamax v ?v "h" ^ "^ 1 iii ? vik v'c ir v^ ^**s _ * ' e = 5' = 3cp ^ ; t 1 a v ' i h (0 t!> ^0 r 3 o 3 c$ 4 3; jt i (k ? ^n / / / / i / f ^oi le ,x- -.tmi 1 ? ? ?uire in tj# i i.u ^ ? ? , mi ~^. "c fc1^h7 f frequency !ghz:> d 1d 2d 3d 40 5c c 7c 0! 90 iqo lc. collector current inai
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